Spin echo from erbium implanted silicon

Extraordinary optical gain from silicon implanted with erbium

Here we report on measurements of optical gain at 1.5 m in crystalline silicon. Gain is achieved by the incorporation of the rare earth erbium in silicon. A method was developed to enable the gain measurement in short silicon waveguides. Crucially, gain values obtained are significantly greater than previously supposed. We have measured a lower limit for the optical cross section for Er3+ of 5 ...

Structure of multi oxygen related defects in erbium implanted silicon

In a previous report, electron paramagnetic resonance measurements of erbium and oxygen implanted into silicon have revealed centres with monoclinic and trigonal symmetry. These centres were tentatively ascribed to different atomic configurations of O and Si atoms surrounding a central Er 3+ ion. In light of recent calculations concerning the structure and stability of multi oxygen related defe...

Ultralow-threshold erbium-implanted toroidal microlaser on silicon

We present an erbium-doped microlaser on silicon operating at a wavelength of 1.5 mm that operates at a launched pump threshold as low as 4.5 mW. The 40 mm diameter toroidal microresonator is made using a combination of erbium ion implantation, photolithography, wet and dry etching, and laser annealing, using a thermally grown SiO2 film on a Si substrate as a starting material. The microlaser, ...

Optical properties of erbium-implanted porous silicon microcavities

Erbium-implanted silica microsphere laser

Spherical silica optical microresonators were doped with erbium ions by ion implantation at energies of 925 keV and 2.05 MeV using a rotating stage. After thermal annealing at 800 C, light was coupled into the microsphere using a tapered optical fiber. An optical quality factor as high as 1.9 · 10 was observed at k = 1450 nm, corresponding to a modal loss of only 0.01 dB/cm. When pumped at 1450...